Growth ofc-Axis-Oriented LiNbO3Films on ZnO/SiO2/Si Substrate by Pulsed Laser Deposition for Surface Acoustic Wave Applications

Autor:	Wen-Ching Shih, Mu-Shiang Wu, Tzyy-Long Wang, Xiao-Yun Sun
Rok vydání:	2008
Předmět:	Full width at half maximum Materials science Physics and Astronomy (miscellaneous) Sputtering Scanning electron microscope General Engineering Analytical chemistry General Physics and Astronomy Substrate (electronics) Thin film Layer (electronics) Deposition (law) Pulsed laser deposition
Zdroj:	Japanese Journal of Applied Physics. 47:4056-4059
ISSN:	1347-4065 0021-4922
Popis:	Highly c-axis-oriented LiNbO3(006) thin films were successfully grown on SiO2/Si substrates with a ZnO buffer layer by XeCl excimer pulsed laser deposition (PLD). The as-deposited films were characterized by X-ray diffraction, scanning electron microscopy, and atomic force microscopy to analyze their crystalline structure and surface morphology. The results show that the highly c-axis-oriented LiNbO3 thin films of 2.5 µm thickness were successfully grown on SiO2/Si substrates with a ZnO buffer layer by PLD. The full width at half maximum intensity of the LiNbO3(006) peak of the sample fabricated under the optimum deposition conditions is only 0.18°. The center frequency of the LiNbO3/ZnO/SiO2/Si substrate with line width of 4 µm is 188 MHz, and the phase velocity is 3010 m/s, which is slightly lower than that of the 36° Y–X LiNbO3 substrate.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::caffbb70371c515ffbbc41b49e7491ad https://doi.org/10.1143/jjap.47.4056 Zobrazit plný text záznamu