Demonstration of True Green ITO Clad Semipolar ( 20 2 ¯ 1 ) InGaN/GaN Laser Diodes

Autor:	Shuji Nakamura, Casey Holder, James S. Speck, Steven P. DenBaars, Matthew T. Hardy, Daniel A. Cohen
Rok vydání:	2013
Předmět:	Materials science business.industry Gallium nitride Cladding (fiber optics) Indium gallium nitride Laser Semiconductor laser theory law.invention Indium tin oxide chemistry.chemical_compound chemistry law Optoelectronics business Refractive index Diode
Zdroj:	CLEO: 2013.
DOI:	10.1364/cleo_si.2013.cf1f.1
Popis:	Non-epitaxial cladding layers have advantages for green laser diodes in terms of reduced p-cladding resistance and reduced active region thermal damage. We demonstrate true green semipolar InGaN/GaN laser diodes with ITO cladding grown on semipolar GaN substrates.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::caf721164e1e06aed245a8b87d327a0b https://doi.org/10.1364/cleo_si.2013.cf1f.1 Zobrazit plný text záznamu