Thick film resistors for AlN ceramics

Autor: K. Yamada, Kiyoshi Kanai, Takahashi Shigeru, Tsuneo Endoh, Yasutoshi Kurihara
Rok vydání: 1991
Předmět:
Zdroj: IEEE Transactions on Components, Hybrids, and Manufacturing Technology. 14:199-203
ISSN: 0148-6411
DOI: 10.1109/33.76532
Popis: RuO/sub 2/ thick-film resistors for aluminum nitride (AlN) ceramics with controlled temperature coefficient of the resistor (TCR) and reliabilities have been developed. The resistors, in the range of approximately 10 Omega / Square Operator to 10 k Omega / Square Operator were obtained using a crystallized glass powder and a RuO/sub 2/ powder, binder materials, and a conducting material. The glass had a low PbO content of 6 wt %, a low thermal expansion coefficient of 3.6*10/sup -6// degrees C, and a softening point of 610 degrees C. The resistors, to which MnO/sub 2/ was added to the above combination, had excellent TCRs of +or-250 p.p.m./ degrees C at 30 Omega / Square Operator to 30 k Omega / Square Operator . These resistors showed small resistance changes, which were less than +1.0% after a thermal cycle test (-55-150 degrees C, 1000 times) and high-temperature storage test, ( 150 degrees C, 1000 h). They had excellent resistance stability. Further, the effect of particle size of glass and RuO/sub 2/ powders on electrical properties of the resistors containing the crystallized glass was similar to that in resistors containing noncrystallized glass for alumina ceramics. >
Databáze: OpenAIRE