Tunneling studies of mesoscopic all-NbN junctions
| Autor: | Orest G. Symko, R. Li, M.D. Reeve |
|---|---|
| Rok vydání: | 1993 |
| Předmět: |
Mesoscopic physics
Materials science Condensed matter physics Band gap Coulomb blockade Substrate (electronics) Condensed Matter Physics Electronic Optical and Magnetic Materials law.invention law Superconducting tunnel junction Electrical and Electronic Engineering Thin film Scanning tunneling microscope Quantum tunnelling |
| Zdroj: | IEEE Transactions on Applied Superconductivity. 3:1976-1979 |
| ISSN: | 1558-2515 1051-8223 |
| DOI: | 10.1109/77.233571 |
| Popis: | A scanning tunneling microscope was used to position a NbN tip near a NbN thin film sputtered on a Si substrate. Measurements at 4.2 K clearly show an energy gap of 5.0 mV. The Coulomb blockade of tunneling and the Coulomb staircase, formed by single-electron charging of the central electrode of a double capacitor system consisting of a substrate, a particle lodged in the oxide, and a tip, were observed at a number of points on the film. Experiments were repeated at room temperature. Fitting I-V and dI/dV-V curves to theory yields capacitances on the order of 5*10/sup 19/ to 2*10/sup -18/ F. The granular nature of the sputtered NbN greatly facilitates formation of the requisite double junction structure. > |
| Databáze: | OpenAIRE |
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