Effect of multiple AlN layers on quality of GaN films grown on Si substrates

Autor: Chen Chen Chung, Kartika Chandra Sahoo, Edward Yi Chang, Chi Lang Nguyen, Binh Tinh Tran, Kung Liang Lin
Rok vydání: 2014
Předmět:
Zdroj: Electronic Materials Letters. 10:1063-1067
ISSN: 2093-6788
1738-8090
DOI: 10.1007/s13391-014-3164-0
Popis: In this paper, we present the effect of multiple thin high-low-high-temperature AlN (HLHT AlN) nucleation layers on GaN film quality. A 1.9-μm-thick GaN film grown on Si (111) substrate shows that the multiple HLHT AlN nucleation layers have a significant effect on GaN film quality. This process also plays a very important role in the growth of GaN films on Si (111) substrates. A high quality GaN film with a uniformly faceted surface with very low dislocation densities is obtained at the optimized multiple HLHT AlN nucleation layers 50-nm thick at a temperature of 1010-800-1010°C and a growth pressure of 50 Torr. Open image in new window
Databáze: OpenAIRE
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