Methyl‐ and dimethyl‐associated paramagnetic centers in SiO2thin films

Autor:	M. S. Crowder, M. L. Galiano, B. C. Nguyen, M. Hoinkis
Rok vydání:	1993
Předmět:	chemistry.chemical_compound Paramagnetism chemistry Annealing (metallurgy) Landé g-factor Analytical chemistry General Physics and Astronomy Chemical vapor deposition Thin film Methyl group
Zdroj:	Journal of Applied Physics. 74:5527-5530
ISSN:	1089-7550 0021-8979
Popis:	SiO2 thin films, deposited by the plasma‐enhanced chemical vapor deposition technique using tetraethylorthosilicate (TEOS) and O2 as precursors, exhibit electron‐paramagnetic‐resonance signals that are interpreted in terms of methyl‐ and dimethyl‐associated centers. The former are observed in as‐deposited films and in films thermally treated below 500 °C while the latter are observed in films that have been thermally treated between 700 and 950 °C. These hydrocarbon‐containing paramagnetic centers originate from TEOS’s ethyl constituents that are incorporated in the SiO2 film during growth.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::caca3ed85dd9bd8d9c368e2149faa206 https://doi.org/10.1063/1.354210 Zobrazit plný text záznamu