Study of δ-doped GaAs layers by micro-Raman spectroscopy on bevelled samples
| Autor: | Daniel Donoval, Gert Irmer, M. Lentze, B. Sciana, Marek Tłaczała, P Brdecka, Damian Radziewicz, Rudolf Srnanek, J. Geurts, A Förster, Peter Kordos |
|---|---|
| Rok vydání: | 2004 |
| Předmět: |
Materials science
Phonon Doping Analytical chemistry General Physics and Astronomy Surfaces and Interfaces General Chemistry Plasma Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Ion laser Molecular physics Spectral line Surfaces Coatings and Films law.invention Ion Condensed Matter::Materials Science symbols.namesake law symbols Condensed Matter::Strongly Correlated Electrons Spectroscopy Raman spectroscopy |
| Zdroj: | Applied Surface Science. 230:379-385 |
| ISSN: | 0169-4332 |
| Popis: | Si δ-doped GaAs layers were studied by micro-Raman spectroscopy. The spectra were recorded along the bevelled structure using the light of Ar + -ion laser (514.5 nm line) with high power density. The observed changes in the Raman spectra are discussed in the sense of coupling present between LO phonon and photoexcited electron–hole plasma and plasma of electrons arising from ionised Si atoms. Plasmon-LO-Phonon modes of the coupling of photoexcited plasma in δ-doped GaAs layers were observed for the first time. The minimal thickness of cap layer was estimated in the range of 10–19 nm depending on the doping concentration. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect