Normal state electronic properties ofLaO1−xFxBiS2superconductors
| Autor: | José D. Querales-Flores, Roberta Citro, J. J. Rodríguez-Núñez, C. I. Ventura |
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| Rok vydání: | 2016 |
| Předmět: |
Superconductivity
Physics Condensed matter physics Spectral density Angle-resolved photoemission spectroscopy 02 engineering and technology Electronic structure Electron 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Molecular physics Electronic Optical and Magnetic Materials Atomic orbital 0103 physical sciences Density of states Electrical and Electronic Engineering 010306 general physics 0210 nano-technology Phase diagram |
| Zdroj: | Physica B: Condensed Matter. 488:32-42 |
| ISSN: | 0921-4526 |
| DOI: | 10.1016/j.physb.2016.01.025 |
| Popis: | A good description of the electronic structure of BiS2-based superconductors is essential to understand their phase diagram, normal state and superconducting properties. To describe the first reports of normal state electronic structure features from angle resolved photoemission spectroscopy (ARPES) in LaO 1 − x F x BiS 2 , we used a minimal microscopic model to study their low energy properties. It includes the two effective tight-binding bands proposed by Usui et al., Phys. Rev. B, 86, 2012, 220501(R), and we added moderate intra- and inter-orbital electron correlations related to Bi-(pY, pX) and S-(pY, pX) orbitals. We calculated the electron Green's functions using their equations of motion, which we decoupled in second-order of perturbations on the correlations. We determined the normal state spectral density function and total density of states for LaO 1 − x F x BiS 2 , focusing on the description of the k-dependence, effect of doping, and the prediction of the temperature dependence of spectral properties. Including moderate electron correlations, improves the description of the few experimental ARPES and soft X-ray photoemission data available for LaO 1 − x F x BiS 2 . Our analytical approximation enabled us to calculate the spectral density around the conduction band minimum at k → 0 = ( 0.45 π , 0.45 π ) , and to predict the temperature dependence of the spectral properties at different BZ points, which might be verified by temperature-dependent ARPES. |
| Databáze: | OpenAIRE |
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