Theoretical investigations of compositional inhomogeneity around threading dislocations in III–nitride semiconductor alloys
| Autor: | Ryohei Sakaguchi, Tomonori Ito, Kohji Nakamura, Toru Akiyama |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Threading dislocations Materials science Condensed matter physics business.industry Monte Carlo method General Engineering General Physics and Astronomy 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Small strain Lattice strain Condensed Matter::Materials Science Crystallography Semiconductor 0103 physical sciences Semiconductor alloys Dislocation 0210 nano-technology business Nitride semiconductors |
| Zdroj: | Japanese Journal of Applied Physics. 55:05FM05 |
| ISSN: | 1347-4065 0021-4922 |
| DOI: | 10.7567/jjap.55.05fm05 |
| Popis: | The compositional inhomogeneity of group III elements around threading dislocations in III–nitride semiconductors are theoretically investigated using empirical interatomic potentials and Monte Carlo simulations. We find that the calculated atomic arrangements around threading dislocations in Al0.3Ga0.7N and In0.2Ga0.8N depend on the lattice strain around dislocation cores. Consequently, compositional inhomogeneity arises around edge dislocation cores to release the strain induced by dislocation cores. In contrast, the compositional inhomogeneity in screw dislocation is negligible owing to relatively small strain induced by dislocation cores compared with edge dislocation. These results indicate that the strain relief around dislocation cores is decisive in determining the atomic arrangements and resultant compositional inhomogeneity around threading dislocations in III–nitride semiconductor alloys. |
| Databáze: | OpenAIRE |
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