Epitaxial growth of GaN/Pd/GaN sandwich structure
| Autor: | Katsuhiro Akimoto, Uitsu Tanaka, Takahiro Maruyama |
|---|---|
| Rok vydání: | 1999 |
| Předmět: |
Auger electron spectroscopy
Materials science Reflection high-energy electron diffraction business.industry Substrate (electronics) Condensed Matter Physics Epitaxy Thermal expansion Inorganic Chemistry Crystallography Materials Chemistry Sapphire Optoelectronics Thin film business Molecular beam epitaxy |
| Zdroj: | Journal of Crystal Growth. :444-447 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/s0022-0248(98)01372-4 |
| Popis: | GaN/Pd/GaN sandwich structure was successfully grown by plasma enhanced molecular beam epitaxy on sapphire (0 0 0 1) substrate. Single crystals of Pd and overlayered GaN were confirmed by RHEED and X-ray diffraction. Epitaxial relationship between GaN and Pd was determined as GaN(0 0 0 1)‖Pd(1 1 1)‖GaN(0 0 0 1) and GaN〈1 1 2 0〉‖Pd〈1 1 0〉‖GaN〈1 1 2 0〉. Although no significant intermixing was observed by Auger electron spectroscopy, the sandwiched Pd seems to have a two-dimensional tensile stress caused by the differences in thermal expansion coefficient between Pd and GaN. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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