Manganese-induced long-range lattice disorder and vacancy formation in metal-organic chemical vapor deposition grown and ion-implanted Ga1−xMnxN
| Autor: | Samuel Graham, Hun Kang, Matthew H. Kane, Ian T. Ferguson, Nikolaus Dietz, Shalini Gupta, Martin Strassburg, William E. Fenwick, Ali Asghar |
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| Rok vydání: | 2006 |
| Předmět: |
Materials science
Condensed matter physics Analytical chemistry chemistry.chemical_element Surfaces and Interfaces Chemical vapor deposition Manganese Condensed Matter Physics Acceptor Surfaces Coatings and Films symbols.namesake Ion implantation chemistry Vacancy defect X-ray crystallography symbols Metalorganic vapour phase epitaxy Raman spectroscopy |
| Zdroj: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 24:1640-1643 |
| ISSN: | 1520-8559 0734-2101 |
| DOI: | 10.1116/1.2201052 |
| Popis: | The structural properties and lattice dynamics of Ga1−xMnxN were studied for Mn concentrations from 0.0% to 1.5%. Ga1−xMnxN layers were fabricated by either Mn incorporation during the metal-organic chemical vapor deposition (MOCVD) growth process or by postgrowth ion implantation into MOCVD-grown GaN epilayers. The crystalline integrity and the absence of major second phase contributions were confirmed by high-resolution x-ray diffraction analysis. Raman spectroscopy showed that increased Mn incorporation in the epilayers significantly affected long-range lattice ordering, revealing a disorder-induced mode at 300cm−1 and a local vibrational mode at 669cm−1. The low intensities of both modes were shown to scale with Mn concentration. These observations support the formation of nitrogen vacancies, even under optimized MOCVD growth conditions. The slight excess of metal components in the growth process compared to undoped GaN growth and the incorporation of Mn deep acceptor levels favors the formation of ni... |
| Databáze: | OpenAIRE |
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