Effect of B atoms on the properties of InAs quantum dots in the GaAs matrix

Autor:	N. V. Vostokov, O. I. Khrykin, M. N. Drozdov, D. A. Pryakhin, A. V. Murel, Yu. N. Drozdov, V. I. Shashkin, V. M. Danil’tsev
Rok vydání:	2008
Předmět:	Condensed Matter::Materials Science Materials science Dopant Condensed matter physics Quantum dot laser Quantum dot Annealing (metallurgy) Thin film Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Surfaces Coatings and Films
Zdroj:	Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 2:514-517
ISSN:	1819-7094 1027-4510
DOI:	10.1134/s1027451008040022
Popis:	The effect of B dopants on the properties of InAs quantum dots is studied experimentally. It is shown that the incorporation of B atoms decreases the integral amount of InAs that is needed to form islands according to the Stransky-Krastanov mechanism and leads to an increase in the density of dots. At the same time, it is discovered that the sensitivity of InAs quantum dots to annealing increases, which leads to the degradation of the optical properties of these quantum dots during growth of covering layers.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::caa89fe1d94aba93bbb62dcaff957dcc https://doi.org/10.1134/s1027451008040022 Zobrazit plný text záznamu Full text from SpringerLink