Fabrication of p-Si/β-FeSi2/n-Si Double-Heterostructure Light-Emitting Diode by Molecular Beam Epitaxy

Autor:	Cheng Li, Motoki Takauji, Fumio Hasegawa, Takashi Suemasu
Rok vydání:	2005
Předmět:	Materials science Annealing (metallurgy) business.industry General Engineering General Physics and Astronomy Double heterostructure Electroluminescence Overlayer law.invention law Optoelectronics business Current density Light-emitting diode Diode Molecular beam epitaxy
Zdroj:	Japanese Journal of Applied Physics. 44:2483
ISSN:	1347-4065 0021-4922
Popis:	We have fabricated p-Si/β-FeSi2 film/n-Si double-heterstructure (DH) light-emitting diodes (LEDs) on Si(111) substrates by molecular beam epitaxy (MBE). It was found that both the thickness of an undoped Si overlayer and subsequent annealing temperature were key parameters in preventing the aggregation of the β-FeSi2 film and the successful formation of a Si/β-FeSi2 film/Si DH LED on Si(111). A 1.6 µm electroluminescence (EL) was realized at room temperature (RT) at a current density higher than 78 A/cm2 by increasing the thickness of the β-FeSi2 active region from 90 nm to 250 nm, suggesting that there exist numerous defects at Si/β-FeSi2 heterointerfaces.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::caa7229c2865002e1ac591e8ff95e71a https://doi.org/10.1143/jjap.44.2483 Zobrazit plný text záznamu