Fabrication of p-Si/β-FeSi2/n-Si Double-Heterostructure Light-Emitting Diode by Molecular Beam Epitaxy
Autor: | Cheng Li, Motoki Takauji, Fumio Hasegawa, Takashi Suemasu |
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Rok vydání: | 2005 |
Předmět: | |
Zdroj: | Japanese Journal of Applied Physics. 44:2483 |
ISSN: | 1347-4065 0021-4922 |
Popis: | We have fabricated p-Si/β-FeSi2 film/n-Si double-heterstructure (DH) light-emitting diodes (LEDs) on Si(111) substrates by molecular beam epitaxy (MBE). It was found that both the thickness of an undoped Si overlayer and subsequent annealing temperature were key parameters in preventing the aggregation of the β-FeSi2 film and the successful formation of a Si/β-FeSi2 film/Si DH LED on Si(111). A 1.6 µm electroluminescence (EL) was realized at room temperature (RT) at a current density higher than 78 A/cm2 by increasing the thickness of the β-FeSi2 active region from 90 nm to 250 nm, suggesting that there exist numerous defects at Si/β-FeSi2 heterointerfaces. |
Databáze: | OpenAIRE |
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