Structural, optoelectronic and electrochemical properties of nickel oxide films
| Autor: | Balasubramanian Subramanian, M. Mohammed Ibrahim, V.S. Vidhya, K. R. Murali, M. Jayachandran, C. Sanjeeviraja |
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| Rok vydání: | 2008 |
| Předmět: |
Materials science
Band gap Annealing (metallurgy) Nickel oxide Non-blocking I/O Analytical chemistry chemistry.chemical_element Condensed Matter Physics Electron beam physical vapor deposition Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Nickel Chemical engineering chemistry Electrochromism Electrical and Electronic Engineering Cyclic voltammetry |
| Zdroj: | Journal of Materials Science: Materials in Electronics. 20:953-957 |
| ISSN: | 1573-482X 0957-4522 |
| Popis: | Thin nickel oxide (NiO) films were deposited by the electron beam evaporation technique. The films were post annealed in air at 450–500 °C for 5 h and the effect of annealing on the structural, microstructural, electrical and optical properties were studied. X-ray diffraction studies indicated the polycrystalline nature of the films. The microstructural parameters were evaluated. The band gap of the films was found to be about 3.60 eV. Electrical resistivity of the films was 4.5 × 10−4 Ω cm. FTIR studies indicated a broad spectrum centered at 461.6 cm−1. Cyclic voltammetry studies in 1 M KOH solution revealed good electronic electrochromic behaviour. |
| Databáze: | OpenAIRE |
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