Configuration and interaction of misfit dislocations in si1-xgex/si(001) epilayer heterostructures grown by gas-source mbe

Autor: A. E. Staton-Bevan, Won Jae Lee
Rok vydání: 1999
Předmět:
Zdroj: Metals and Materials. 5:231-235
ISSN: 1225-9438
DOI: 10.1007/bf03026072
Popis: Transmission electron microscopy has been employed to investigate dislocation configurations and interactions m Si1-xGex/Si(001) epilayer heterostructures grown by Gas-Source MBE Thick Si1-xGex/Si(001) epilayers had 3-dimensional configuration of misfit dislocations in the entire structure The main arrays of misfit dislocations at each single Si1-xGex/Si(001) interface were along the two directions, being 60° type in character Three-way dislocation configuration, resulting from the interaction between dislocations, was observed at the interface Observation of oriented dislocations having striation lines was new in low misfit (1
Databáze: OpenAIRE