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Transmission electron microscopy has been employed to investigate dislocation configurations and interactions m Si1-xGex/Si(001) epilayer heterostructures grown by Gas-Source MBE Thick Si1-xGex/Si(001) epilayers had 3-dimensional configuration of misfit dislocations in the entire structure The main arrays of misfit dislocations at each single Si1-xGex/Si(001) interface were along the two directions, being 60° type in character Three-way dislocation configuration, resulting from the interaction between dislocations, was observed at the interface Observation of oriented dislocations having striation lines was new in low misfit (1 |