| Autor: |
Alexander Schafgans, Rob Rafac, David C. Brandt, Peter Mayer, Michael Purvis, Igor V. Fomenkov, Daniel Brown |
| Rok vydání: |
2021 |
| Předmět: |
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| Zdroj: |
Extreme Ultraviolet (EUV) Lithography XII. |
| DOI: |
10.1117/12.2584413 |
| Popis: |
Over 50 EUV scanners are installed at customer factories and being used in high volume manufacturing (HVM) of leading semiconductor devices. The latest generation of EUV sources are operating at 250W while meeting all other requirements. Future EUV scanners are projected to require more stable EUV and higher powers >600W to meet throughput requirements. In this paper, we provide an overview of a the latest advances in the laboratory for tin laser-produced-plasma (LPP) extreme-ultraviolet (EUV) sources at 13.5nm enabling HVM at the N5 node and beyond, highlighting crucial EUV source technology developments needed to meet future requirements for EUV power and stability. This includes the performance of subsystems such as the Collector and the Droplet Generator. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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