Getter evaporation of pure thin films of indium antimonide
| Autor: | V Malina, R P Howson |
|---|---|
| Rok vydání: | 1970 |
| Předmět: |
Electron mobility
Materials science Acoustics and Ultrasonics Indium antimonide Analytical chemistry Condensed Matter Physics Evaporation (deposition) Surfaces Coatings and Films Electronic Optical and Magnetic Materials Hall element chemistry.chemical_compound Heated glass chemistry Getter Impurity Thin film |
| Zdroj: | Journal of Physics D: Applied Physics. 3:871-876 |
| ISSN: | 0022-3727 |
| DOI: | 10.1088/0022-3727/3/6/306 |
| Popis: | Films of InSb have been prepared by the evaporation of the elements on to heated glass substrates up to a thickness of 5 μm. The use of a semiclosed system has allowed material, initially evaporated on to the container walls, to getter the residual gas of active impurities before the substrates are exposed. Carrier densities of just over 1022 m−3 were obtained which were constant with film thickness; the electron mobility increased with film thickness to a value of 1·7 m2V−1s−1 at about 2 μm, above which it remained approximately constant. Hall element sensitivities of 350 V A−1 T−1 were obtained, though with a considerable temperature dependence. |
| Databáze: | OpenAIRE |
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