Characteristics of FeSi2quantum dots on silicon

Autor:	G. Molnár, Zofia Vértesy, E. Horváth, G. Petö, L. Dózsa, E. Vázsonyi, Ambrus Toth
Rok vydání:	2004
Předmět:	Silicon business.industry chemistry.chemical_element Substrate (electronics) Photoresist Condensed Matter Physics Epitaxy Electronic Optical and Magnetic Materials Optics chemistry Quantum dot Optoelectronics Wafer business Instrumentation Layer (electronics) Deposition (law)
Zdroj:	The European Physical Journal Applied Physics. 27:85-88
ISSN:	1286-0050 1286-0042
Popis:	Self-assembled β-FeSi 2 quantum (QD) dots were grown on n-type Si and investigated in this work. Secondary electron images show the shape and distribution of the quantum dots depends on the temperature and thickness of the Fe deposition. Electrical characteristics were measured in MIS devices prepared by covering the quantum dots by an oxide or by a photoresist layer. The cold deposited and subsequently annealed Fe layers were found to generate large concentration of deep level defects, compensating the upper few microns layer of the silicon wafer. Reactive deposition epitaxy (RDE) growth of QDs where the iron is deposited on hot substrate- generated much lower concentration of defect, in some devices with characteristics comparable to the reference wafer. The significant scatter on the surface is attributed to inhomogeneous growth conditions and to residual surface contamination on the surface.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ca71ba7d2e882206af465801fac971b4 https://doi.org/10.1051/epjap:2004115 Zobrazit plný text záznamu