Degradation of 650 V SiC double-trench MOSFETs under repetitive overcurrent switching stress

Autor:	Lihao Wang, Yunpeng Jia, Xintian Zhou, Yuanfu Zhao, Dongqing Hu, Yu Wu, Liang Wang, Tongde Li, Zhonghan Deng
Rok vydání:	2022
Předmět:	Electrical and Electronic Engineering Safety Risk Reliability and Quality Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials
Zdroj:	Microelectronics Reliability. 133:114545
ISSN:	0026-2714
DOI:	10.1016/j.microrel.2022.114545
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ca675927a1b76ff084c33b503de98ef6 https://doi.org/10.1016/j.microrel.2022.114545 Zobrazit plný text záznamu Full Text from ScienceDirect