The Fluid Flow Effect on the Inlet Injection of the Thin Film Deposition in a Square Type Atomic Layer Deposition Reactor
| Autor: | Hong-Liang Lu, Tien-Chien Jen, Rigardt Alfred Maarten Coetzee |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
0209 industrial biotechnology
Argon Fabrication Materials science chemistry.chemical_element 02 engineering and technology Substrate (electronics) Industrial and Manufacturing Engineering chemistry.chemical_compound Atomic layer deposition 020303 mechanical engineering & transports 020901 industrial engineering & automation 0203 mechanical engineering chemistry Artificial Intelligence Fluid dynamics Aluminium oxide Deposition (phase transition) Thin film Composite material |
| Zdroj: | Procedia Manufacturing. 35:223-228 |
| ISSN: | 2351-9789 |
| DOI: | 10.1016/j.promfg.2019.06.002 |
| Popis: | In recent years, industry is ever striving to deposit optimal thin films on nano devices. This strive led to interest in utilizing advance nano-manufacturing techniques that can fabricate ever-decreasing scale products along with films that provide highly uniform, conformal, and pin-hole-free quality thin films. Atomic layer deposition provides a technique that fulfil these requirements. However, the understanding of the deposition process within the fabrication of these thin films are still greatly not well-known. The fluid flow patterns and distributions within the atomic layer deposition reactors are rarely investigated and lacks the fluid flow effect incorporated along with the deposition process near the substrate. Per se, these effects due to the geometrical effect of the inlet injection location from the deposited substrate of a square type Gemstar Reactor is investigated. The findings reveal the inlet flow effect, near substrate flow behavior, and optimal selection for the deposition of aluminium oxide (Al2O3) thin film. The study simulates the fluid flow properties along with the chemical kinetics by applying computational fluid dynamics incorporated within ANSYS Fluent Software. The flow and surface reaction of Trimethylaluminium and Ozone as precursors, and Argon as the purging gas, are incorporated within the atomic layer deposition sequence. The findings reveal close similarities to that of previous literature. |
| Databáze: | OpenAIRE |
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