Photochemical etching of silicon by two photon absorption
| Autor: | W. H. Knox, Huimin Ouyang, Yujun Deng, Philippe M. Fauchet |
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| Rok vydání: | 2007 |
| Předmět: |
Materials science
Silicon business.industry Hybrid silicon laser chemistry.chemical_element Surfaces and Interfaces Condensed Matter Physics Photochemistry Isotropic etching Surfaces Coatings and Films Electronic Optical and Magnetic Materials Surface micromachining Optics chemistry Etching (microfabrication) Materials Chemistry Dry etching Electrical and Electronic Engineering Reactive-ion etching business Buffered oxide etch |
| Zdroj: | physica status solidi (a). 204:1255-1259 |
| ISSN: | 1862-6319 1862-6300 |
| DOI: | 10.1002/pssa.200674303 |
| Popis: | Photochemical etching of silicon assisted by two-photon absorption (TPA) in the presence of hydrofluoric acid (HF) is demonstrated using a below-bandgap femtosecond laser source. We investigate the morphology of the etched silicon as a function of the laser power, exposure time, as well as the substrate doping level. Self-organized periodic silicon trenches with ∼150 nm spacing were observed at the etch front as the initial stage of the TPA photochemical etching process. Since the etching front can be precisely controlled by the focal point, this technique can be used for writing silicon microfluidic systems and for 3D micromachining. |
| Databáze: | OpenAIRE |
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