Optical and electrical properties of laser doped Si:B in the alloy range
| Autor: | Jacques Boulmer, Dominique Débarre, T. Kociniewski, A. Bhaduri, Frédéric Fossard |
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| Rok vydání: | 2012 |
| Předmět: |
Materials science
Dopant Silicon Doping Analytical chemistry General Physics and Astronomy chemistry.chemical_element Surfaces and Interfaces General Chemistry Conductivity Condensed Matter Physics Laser Drude model Surfaces Coatings and Films law.invention Gas immersion laser doping chemistry law Spectroscopy |
| Zdroj: | Applied Surface Science. 258:9228-9232 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/j.apsusc.2011.10.077 |
| Popis: | We have probed the dopant activity of silicon B-doped by Gas Immersion Laser Doping (GILD). Here, we report on the comparison of optical, electrical and structural properties of Si:B, over a wide concentration range, up to 1.5 × 10 21 cm −3 by steps of 1.5 × 10 19 cm −3 . Data obtained by reflectance FTIR spectroscopy are used within a Drude model to extract concentration, thickness and mobility. Resulting carrier concentration and conductivity are checked with 4-point probe electrical and X-ray diffraction measurements. FTIR proved to be very sensitive to the dopant distribution inside the layer, despite its thinness. It clearly reveals a moderate dopant accumulation at the interfaces. |
| Databáze: | OpenAIRE |
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