Growth of gallium arsenide under various initial supersaturation levels in a gaas-ASCL3-H2 gas-transport system

Autor:	L. P. Porokhovnichenko, L. G. Lavrent'eva, O. M. Ivleva
Rok vydání:	1976
Předmět:	chemistry.chemical_compound Supersaturation Materials science chemistry Chemical physics General Physics and Astronomy chemistry.chemical_element Growth rate Gallium Epitaxy Transport system Arsenide Gallium arsenide
Zdroj:	Soviet Physics Journal. 19:726-730
ISSN:	1573-9228 0038-5697
DOI:	10.1007/bf00943469
Popis:	The dependence of growth rate, morphology, and structure of epitaxial layers of gallium arsenide on initial supersaturation conditions were investigated.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ca444cf742da63220e7d21f2c7c56175 https://doi.org/10.1007/bf00943469 Zobrazit plný text záznamu Full text from SpringerLink