Embedded DRAM: an element and circuit evaluation

Autor:	Hem M. Vaidya, Philip W. Diodato, W.S. Lindenberger, W.Y.C. Lai, S. Chaudhry, C.-T. Liu, J.H. O'Neill, A.C. Dumbri, Y.-H. Wong, Glenn B. Alers
Rok vydání:	2002
Předmět:	Hardware_MEMORYSTRUCTURES Materials science business.industry Electrical engineering Dielectric Dielectric thin films law.invention Capacitor Application-specific integrated circuit Memory cell law Hardware_INTEGRATEDCIRCUITS business Dram Dram memory Static behavior
Zdroj:	Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No.00CH37044).
DOI:	10.1109/cicc.2000.852669
Popis:	Embedded DRAM memory cells employing advanced capacitor dielectrics (Ta/sub 2/O/sub 5/) have been designed, fabricated, and measured. Memory cell data retention time is used to compare capacitor characteristics between four Ta/sub 2/O/sub 5/ equipment vendors. Static behavior in one type of DRAM cell is attributed to the bimodal current-voltage characteristic of the Ta/sub 2/O/sub 5/, and circuit topography.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ca441abd3df83c7db96f9a59edb358a1 https://doi.org/10.1109/cicc.2000.852669 Zobrazit plný text záznamu