Nb-based SNS junctions with Al and TaO/sub x/ barriers for a programmable Josephson voltage standard
| Autor: | Vincenzo Lacquaniti, D. Andreone, E. Monticne, Sabino Maggi, S. Gonzini, R. Steni |
|---|---|
| Rok vydání: | 1999 |
| Předmět: |
Josephson effect
Fabrication Materials science business.industry Josephson voltage standard Niobium chemistry.chemical_element Biasing Condensed Matter Physics Electronic Optical and Magnetic Materials chemistry Aluminium Sputtering X-ray crystallography Optoelectronics Electrical and Electronic Engineering business |
| Zdroj: | IEEE Transactions on Appiled Superconductivity. 9:4245-4248 |
| ISSN: | 1051-8223 |
| DOI: | 10.1109/77.783962 |
| Popis: | We report results achieved in the fabrication of two different Nb-based SNS devices which can be used for the development of a programmable Josephson voltage standard. Junctions with an Al metal barrier, 5 to 100 nm thick, have been fabricated obtaining devices with I/sub C/R/sub N//spl ap/0.5 mV. A second kind of junction has been fabricated using 10 nm thick non-stabilized TaO/sub x/ as a barrier, deposited by bias sputtering. For these devices, using the bias voltage as the main process parameter, I/sub C/R/sub N//spl ap/0.1 mV was obtained. Measurements of the electrical properties of the Nb/Al/Nb and the Nb/TaO/sub x//Nb junctions are reported. |
| Databáze: | OpenAIRE |
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