The Effect of Stepped Wall of the Graphite Crucible in Top Seeded Solution Growth of SiC Crystal
| Autor: | Mi Seon Park, Yun Ji Shin, Yeon Suk Jang, Seong-Min Jeong, Won-Jae Lee, Jeong Min Choi, Myung Hyun Lee, Chae Young Lee, Su Hun Choi, Young Gon Kim |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Mechanical Engineering Crystal growth 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Crystal Mechanics of Materials 0103 physical sciences Graphite crucible General Materials Science Seeding Composite material 0210 nano-technology |
| Zdroj: | Materials Science Forum. 924:27-30 |
| ISSN: | 1662-9752 |
| DOI: | 10.4028/www.scientific.net/msf.924.27 |
| Popis: | The crucible design having a stepped wall was introduced for increasing the growth rate of SiC crystal without metal addition in top-seeded solution growth (TSSG) method. The numerical simulation confirmed that new crucible design to increase the solvent-crucible interface could definitely change the temperature distribution and increase the carbon concentration. The simulation result, SiC single crystals were grown with Si solvent at 1900°C using a normal crucible and a stepped crucible to investigate the effect of crucible design having a stepped wall. Grown SiC layers were analyzed using Optical microscopy and Raman spectra. The growth rate in the stepped crucible was finally 66um/h observed. |
| Databáze: | OpenAIRE |
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