S2-T4: Low-temperature substrate bonding technology for high power GaN-on-diamond HEMTs

Autor:	Thomas Yurovchak, Pane C. Chao, J. Diaz, Scott Sweetland, Carlton T. Creamer, Craig McGray, Raymond L. Kallaher, Kenneth K. Chu
Rok vydání:	2014
Předmět:	Materials science Fabrication business.industry Transconductance Transistor Diamond Gallium nitride Substrate (electronics) engineering.material law.invention chemistry.chemical_compound chemistry law Silicon carbide Electronic engineering engineering Optoelectronics business Power density
Zdroj:	2014 Lester Eastman Conference on High Performance Devices (LEC).
Popis:	We report the first demonstration of GaN-on-diamond RF power transistors produced by low-temperature substrate bonding technology. GaN high-electron-mobility transistors (HEMTs) are lifted from the original SiC substrate post fabrication and transferred onto high-quality polycrystalline diamond with thermal conductivity of 1,800–2,000 W/mK. Resulting GaN-on-diamond HEMTs demonstrated DC current density of 1.0A/mm transconductance of 330mS/mm and RF output power density of 6.0W/mm at 10GHz (CW). Finite-element thermal modeling indicates GaN-on-diamond technology based on low-temperature substrate bonding is capable of 3X increased power per area compared to conventional GaN-on-SiC devices.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ca23fcb0f89e4005114ad171fb3a487b https://doi.org/10.1109/lec.2014.6951558 Zobrazit plný text záznamu