The effects of oxygen on the electronic and optical properties of AlInAs layers lattice‐matched to InP substrates grown by atmospheric‐pressure metal‐organic chemical vapor deposition

Autor:	Mikio Kamada, G. E. Stillman, Ishikawa Hideto, Shiro Miwa
Rok vydání:	1993
Předmět:	Secondary ion mass spectrometry Photoluminescence chemistry Atmospheric pressure Analytical chemistry General Physics and Astronomy chemistry.chemical_element Schottky diode Limiting oxygen concentration Heterojunction Chemical vapor deposition Oxygen
Zdroj:	Journal of Applied Physics. 73:4004-4008
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.352866
Popis:	AlInAs layers lattice‐matched to InP substrates were grown by atmospheric‐pressure metal‐organic chemical vapor deposition. The residual oxygen concentration determined by secondary ion mass spectrometry ranged from 3×1016 to 3×1019 cm−3, and was high when the growth temperature was low or the V/III ratio was low. The oxygen concentration and the residual carrier concentration showed the same dependence on the V/III ratio in the high V/III ratio region. This suggests that oxygen is the origin of the residual carrier concentration. Strong correlations between the oxygen concentration and the photoluminescence intensity and reverse current through Schottky diodes suggest that oxygen creates generation‐recombination centers in AlInAs layers.
Databáze:	OpenAIRE
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