Autor: |
J. Rinderknecht, E. Zschech, Holm Geisler, I. Zienert, Hartmut Prinz, P. Besser |
Rok vydání: |
2004 |
Předmět: |
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Zdroj: |
AIP Conference Proceedings. |
ISSN: |
0094-243X |
Popis: |
The influence of ILD, liner and etch stop layer on the room temperature stress state of copper line test structures was examined by micro‐XRD. Test structures consisted of large arrays of parallel lines with line widths of 0.18 μm and 1.8 μm. All these parameters have an influence on the room temperature stress state, whereas the variation of the liner and the ILD showed the largest effects. The change from a full low‐k stack to a hybrid stack, where SiO2 ILD is use for the ‘via layer’ only and low‐k material for the ‘line layer’ results in completely different parameter dependencies. The relationship between copper microstructure and the resulting stress in copper lines is discussed. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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