Thermionic field emission in GaN nanoFET Schottky barriers
| Autor: | Virginia M. Ayres, Mary Anne Tupta, Kan Xie, A.F. Zeller, Thomas Baumann, R. M. Ronningen, Steven Allen Hartz, Benjamin W. Jacobs |
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| Rok vydání: | 2014 |
| Předmět: |
Materials science
Polymers and Plastics business.industry Schottky barrier Schottky effect Metals and Alloys Schottky diode Gallium nitride Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Metal–semiconductor junction Surfaces Coatings and Films Electronic Optical and Magnetic Materials Biomaterials Condensed Matter::Materials Science chemistry.chemical_compound Semiconductor Effective mass (solid-state physics) chemistry Optoelectronics business Quantum tunnelling |
| Zdroj: | Materials Research Express. 2:015003 |
| ISSN: | 2053-1591 |
| DOI: | 10.1088/2053-1591/2/1/015003 |
| Popis: | A mathematical stability approach that enables the evaluation of the mulitvariate thermionic field emission parameters at Schottky barriers is presented. The method is general, requiring only the effective mass and relative dielectric constant for a given semiconductor. The approach is demonstrated in a first-time analysis of the barrier heights, tunneling probabilities and potential drops for changes in the Schottky barriers of gallium nitride nano-field effect transistors in a long-duration heavy ion radiation extreme environment. The investigation yielded fundamental insights into behavior that would be challenging to predict a priori. |
| Databáze: | OpenAIRE |
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