MOCVD deposition of epitaxial lithium niobate, LiNbO3, thin films using the single source precursor lithium niobium ethoxide, LiNb(OEt)6
| Autor: | Alex A. Wernberg, Henry J. Gysling |
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| Rok vydání: | 1993 |
| Předmět: |
Materials science
Fabrication Vapor pressure General Chemical Engineering technology industry and agriculture Niobium chemistry.chemical_element General Chemistry Chemical vapor deposition Epitaxy Surface coating chemistry Chemical engineering Materials Chemistry Metalorganic vapour phase epitaxy Thin film |
| Zdroj: | Chemistry of Materials. 5:1056-1058 |
| ISSN: | 1520-5002 0897-4756 |
| DOI: | 10.1021/cm00032a002 |
| Popis: | In this communication the authors report the fabrication of epitaxial LiNbO[sub 3] thin films of improved crystalline properties and surface morphology using the well-characterized single-source reagent, LiNb(OEt)[sub 6]. The spray MOCVD film fabrication technique used for these depositions is essentially a chemical vapor deposition process in which precursors with relatively low vapor pressure are transported via a mist into a hot-wall reactor where rapid and efficient volatilization occurs. Previous work in this laboratory has demonstrated its utility for the fabrication of high-quality thin films of various semiconductors (i.e., ZnS, GaAs, InSe, and In[sub 2]Se[sub 3][sup 14]) using single-source precursor reagents. A related MOCVD process (supercritical fluid-transport chemical vapor deposition), which can also use precursors of low volatility, has been recently reported. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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