Improvement of InGaN/GaN laser diodes by using a Si-doped In/sub 0.23/Ga/sub 0.77/N/GaN short-period superlattice tunneling contact layer
| Autor: | Wei-Hong Kuo, J. K. Sheu, Ching-En Tsai, Chun-Ju Tun, Jim Y. Chi, Te-Chung Wang, Jung-Tsung Hsu, Ru-Chin Tu, Gou-Chung Chi |
|---|---|
| Rok vydání: | 2003 |
| Předmět: | |
| Zdroj: | IEEE Electron Device Letters. 24:206-208 |
| ISSN: | 1558-0563 0741-3106 |
| DOI: | 10.1109/led.2003.810889 |
| Popis: | InGaN/GaN multiple-quantum-well laser diode (LD) structures, including an Si-doped n/sup +/-In/sub 0.23/Ga/sub 0.77/N/GaN short-period superlattice (SPS) tunneling contact layer, are grown on c-face sapphire substrates by metalorganic vapor-phase epitaxy. The In/sub 0.23/Ga/sub 0.77/N/GaN(n/sup +/)-GaN(p) tunneling junction, which uses a low-resistivity n/sup +/-In/sub 0.23/Ga/sub 0.77/N/GaN SPS instead of a high-resistivity p-type GaN as a top contact layer, allows the reverse-biased tunnel junction to form a "quasi-ohmic" contact. Experimental results indicate that LDs with n/sup +/-In/sub 0.23/Ga/sub 0.77/N/GaN SPS contacting layers can achieve a lower threshold current and longer lasing duration under pulsed operation. Moreover, when the input pulse width is lengthened from 300 ns to 2 /spl mu/s, the lasing duration of the LD with Pt ohmic contact is three times longer than that of the LD with Ni/Au ohmic contacts. Therefore, we conclude that nitride-based LDs with an SPS reversed-tunneling contact layer may significantly reduce the contact resistance of an anode electrode and thereby increase the thermal stability of the device reliability. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|