| Autor: |
Wolfgang S. M. Werner, C Fink, Werner Kanert, Joerg Schulze, Walter Hansch, Ignaz Eisele, S Sedlmaier, C. Tolksdorf |
| Rok vydání: |
2002 |
| Předmět: |
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| Zdroj: |
Materials Science and Engineering: B. 89:439-443 |
| ISSN: |
0921-5107 |
| DOI: |
10.1016/s0921-5107(01)00856-x |
| Popis: |
One major goal in power device research is the reduction of power losses while keeping high breakdown voltages. Commonly used power devices, e.g. DMOS™, use a combination of lateral channel and vertical drift zone. This involves power losses that can be reduced by a device concept with vertical channel and drift zone. We will discuss the classical DMOS™ structure in comparison with our vertical power device concept which was investigated with molecular beam epitaxy grown doping structures. The results show the influence of the channel design, i.e. homogeneous channel doping versus local channel doping, and its effect on the state-on resistance. Computer simulations help understand the advantages of the vertical concept and the improvement of the state-on resistance by local channel doping. For the channel design it is furthermore interesting to study the influence of the position of the local doping inside the channel on the device characteristics. The optimization of the channel design realized in a vertical device paves the way for size reduction of power devices and offers therefore first insights into the physical limits of the vertical concept. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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