| Autor: |
Min-Soo Yoo, Jong-Ho Lee, Sung-Joo Hong, Kyung-Do Kim, Byung-Gook Park, Chan-Hyeong Park, Sung-Kye Park, Yong-Taik Kim, Kwi-Wook Kim |
| Rok vydání: |
2015 |
| Předmět: |
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| Zdroj: |
2015 IEEE International Electron Devices Meeting (IEDM). |
| DOI: |
10.1109/iedm.2015.7409645 |
| Popis: |
To characterize electrically the effect of the Cu diffusion in TSVs, a new test pattern is proposed and its effectiveness is verified experimentally. The test pattern has a shallow n+ region formed in an n-well region butted to the TSV dielectric surrounding the TSV. Through the n+/n well region, we can measure the diode and gated diode currents, the charge pumping current, and C-V to accurately analyze the effect. Our approach is demonstrated to be very useful by investigating the Cu diffusion effect in samples with two different barrier metal thicknesses. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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