Ultra-high vacuum chemical vapor deposition and in situ characterization of titanium oxide thin films
| Autor: | Rishi Raj, Jiong-Ping Lu |
|---|---|
| Rok vydání: | 1991 |
| Předmět: |
Materials science
Hybrid physical-chemical vapor deposition Mechanical Engineering Ion plating Analytical chemistry Chemical vapor deposition Combustion chemical vapor deposition Condensed Matter Physics Pulsed laser deposition Carbon film Mechanics of Materials Deposition (phase transition) General Materials Science Thin film |
| Zdroj: | Journal of Materials Research. 6:1913-1918 |
| ISSN: | 2044-5326 0884-2914 |
| Popis: | Chemical vapor deposition (CVD) of titanium oxide films has been performed for the first time under ultra-high vacuum (UHV) conditions. The films were deposited through the pyrolysis reaction of titanium isopropoxide, Ti(OPri)4, and in situ characterized by x-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). A small amount of C incorporation was observed during the initial stages of deposition, through the interaction of precursor molecules with the bare Si substrate. Subsequent deposition produces pure and stoichiometric TiO2 films. Si–O bond formation was detected in the film-substrate interface. Deposition rate was found to increase with the substrate temperature. Ultra-high vacuum chemical vapor deposition (UHV-CVD) is especially useful to study the initial stages of the CVD processes, to prepare ultra-thin films, and to investigate the composition of deposited films without the interference from ambient impurities. |
| Databáze: | OpenAIRE |
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