Molecular effect in the expansion of ion implanted InSb

Autor:	J.P. Gailliard, G.L. Destefanis, J.P. Belle, J.M. Ogier-Collin
Rok vydání:	1981
Předmět:	Surface (mathematics) Materials science Ion beam mixing Quantitative Biology::Tissues and Organs Polyatomic ion Perpendicular General Medicine Atomic physics Ion
Zdroj:	Nuclear Instruments and Methods. :637-639
ISSN:	0029-554X
DOI:	10.1016/0029-554x(81)90789-8
Popis:	The expansion of implanted InSb layers perpendicular to the surface is investigated as a function of implantation of either atomic or molecular ions. The measured expansion after a molecular ion implantation can be twenty times higher than with an atomic ion. We show that these results are consistent with a model based onthermal spikes of two closely overlapping cascades.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c9e1438bc419dc0ba4dde7acaecaa2f1 https://doi.org/10.1016/0029-554x(81)90789-8 Zobrazit plný text záznamu