Statistical Enhancement of the Evaluation of Combined RDD- and LER-Induced $V_{T}$ Variability: Lessons From $\hbox{10}^{5}$ Sample Simulations

Autor:	Asen Asenov, Scott Roy, Campbell Millar, Dave Reid
Rok vydání:	2011
Předmět:	Stochastic process Computer science Logic gate MOSFET Sample (statistics) Solid modeling Electrical and Electronic Engineering Threshold model Algorithm Simulation Electronic Optical and Magnetic Materials Voltage Threshold voltage
Zdroj:	IEEE Transactions on Electron Devices. 58:2257-2265
ISSN:	1557-9646 0018-9383
DOI:	10.1109/ted.2011.2147317
Popis:	Using full-scale 3-D simulations of 100 000s of devices, enabled by “push-button” cluster technology, we study in detail statistical threshold voltage variability in a state-of-the-art n-channel MOSFET introduced by the combined effect of random discrete dopants (RDDs) and line edge roughness (LER) and demonstrate that the resulting distribution is non-normal. Based on careful statistical analysis of the results, we show how the resulting distribution of VT can be constructed from the distributions arising from the individual simulation of RDD and LER variability. In accomplishing this task, we have deployed computationally efficient statistical enhancement techniques that drastically reduce the computational effort needed to accurately characterize threshold voltage variability under the combined influence of RDD and LER.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c9de24b009c2e7e7b5cbaa660a35d601 https://doi.org/10.1109/ted.2011.2147317 Zobrazit plný text záznamu