Relaxation of a radiation-damaged layer formed during ion-beam milling of CdHgTe solid solutions

Autor:	V. S. Varavin, G. V. Savitskii, Sergey A. Dvoretsky, K. D. Mynbaev, I. I. Izhnin, Nikolay N. Mikhailov, E. I. Fitsych
Rok vydání:	2013
Předmět:	chemistry.chemical_compound Materials science Physics and Astronomy (miscellaneous) chemistry Ion beam Analytical chemistry Mercury telluride Relaxation (physics) Charge carrier Mercury cadmium telluride Decomposition Layer (electronics) Solid solution
Zdroj:	Technical Physics Letters. 39:16-19
ISSN:	1090-6533 1063-7850
DOI:	10.1134/s1063785013010136
Popis:	We have studied the relaxation of electrical properties in radiation-damaged layers formed during ion-beam milling (IBM) of cadmium mercury telluride (CdHgTe) solid solutions. It is established that the initial concentration of donor centers formed due to radiation-induced defects and the dynamics of their decomposition in the course of aging (relaxation) are determined by the composition of the solid solution. The mobility of charge carriers in radiation-damaged CdHgTe layers upon relaxation also depends on the solid solution composition.
Databáze:	OpenAIRE
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