35-nm Zigzag T-Gate $\hbox{In}_{0.52}\hbox{Al}_{0.48} \hbox{As/In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ Metamorphic GaAs HEMTs With an Ultrahigh $f_{\max}$ of 520 GHz
| Autor: | Young-Su Kim, Yun-Ki Hong, Kang-Sung Lee, Yoon-Ha Jeong |
|---|---|
| Rok vydání: | 2007 |
| Předmět: |
Materials science
business.industry Transconductance Transistor Electrical engineering Metamorphic high electron mobility transistor Electronic Optical and Magnetic Materials Gallium arsenide law.invention chemistry.chemical_compound Zigzag chemistry law Optoelectronics Electrical and Electronic Engineering business Drain current High electron |
| Zdroj: | IEEE Electron Device Letters. 28:672-675 |
| ISSN: | 0741-3106 |
| DOI: | 10.1109/led.2007.901579 |
| Popis: | Metamorphic GaAs high electron mobility transistors (mHEMTs) with the highest-f max reported to date are presented here. The 35-nm zigzag T-gate In0.52Al0.48As/In0.53Ga0.47As metamorphic GaAs HEMTs show f maxof 520 GHz, f T of 440 GHz, and maximum transconductance (g m) of 1100 mS/mm at a drain current of 333 mA/mm. The combinations of f max and f T are the highest data yet reported for mHEMTs. These devices are promising candidates for aggressively scaled sub-35-nm T-gate mHEMTs. |
| Databáze: | OpenAIRE |
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