Simulation of SOI devices and circuits using BSIM3SOI

Autor:	S. Tang, Chenming Hu, A. Jangity, Fariborz Assaderaghi, Ghavam G. Shahidi, D. Sinitsky
Rok vydání:	1998
Předmět:	EKV MOSFET Model Materials science business.industry Electrical engineering Silicon on insulator Transient analysis Electronic Optical and Magnetic Materials Refining MOSFET Transient (oscillation) Electrical and Electronic Engineering Current (fluid) business Electronic circuit
Zdroj:	IEEE Electron Device Letters. 19:323-325
ISSN:	1558-0563 0741-3106
DOI:	10.1109/55.709628
Popis:	A versatile SOI model derived from the BSIM3v3 bulk MOSFET model is capable of simulating partially and fully depleted devices with options for self-heating and floating body effects. The model can automatically switch between fully and partially depleted regimes. After refining body current models we for the first time present successful dc and transient device and circuit simulation of an SOI MOSFET technology with L/sub eff/ below 0.2 /spl mu/m.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c9a821128f304f214fa8ae9b52a837ef https://doi.org/10.1109/55.709628 Zobrazit plný text záznamu