Thin Film Lithium Niobate Electro-Optic Modulator for 1064 nm Wavelength
| Autor: | Abu Naim R. Ahmed, Dennis W. Prather, Navarun Jagatpal, Andrew J. Mercante |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
Materials science
business.industry Lithium niobate Electro-optic modulator Optical polarization 02 engineering and technology Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention Frequency comb chemistry.chemical_compound 020210 optoelectronics & photonics chemistry law 0202 electrical engineering electronic engineering information engineering Optoelectronics Electrical and Electronic Engineering business Waveguide Phase modulation Maskless lithography Electron-beam lithography |
| Zdroj: | IEEE Photonics Technology Letters. 33:271-274 |
| ISSN: | 1941-0174 1041-1135 |
| DOI: | 10.1109/lpt.2021.3056913 |
| Popis: | Electro-optic modulators are used in a wide variety of photonic systems, and their operation at the 1064 nm wavelength is notable for its applications such as frequency comb generation and optical interconnects. This work demonstrates the first (to the best of our knowledge) thin film lithium niobate electro-optic modulator operating at a wavelength of 1064 nm. The modulator was fabricated from crystal-ion-sliced lithium niobate wafers procured from NanoLN. Electron beam lithography was used to define the waveguides, and laser lithography was used to define the electrodes, forming a ridge waveguide in the lithium niobate, with a width of 900 nm and an etch depth of 90 nm, by inductively coupled plasma etching. The modulator was characterized using a polarization rotation technique, in which two modes of the waveguide were excited and both were shown to exhibit phase modulation. This modulator exhibits a half-wave voltage of 2.73 volts, with a 7 mm long interaction region and 1.91 V-cm modulation efficiency. |
| Databáze: | OpenAIRE |
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