Growth of high-quality GaN films on epitaxial AlN/sapphire templates by MOVPE

Autor:	Hiroyasu Ishikawa, Masahiro Sakai, Tomohiko Shibata, Osamu Oda, Shigeaki Sumiya, Masayoshi Umeno, Mitsuhiro Tanaka, Takashi Jimbo, Yoshitaka Kuraoka, Keiichiro Asai, Takashi Egawa
Rok vydání:	2002
Předmět:	Materials science Photoluminescence business.industry Edge (geometry) Nitride Condensed Matter Physics Epitaxy Inorganic Chemistry Quality (physics) Optics Materials Chemistry Sapphire Optoelectronics Metalorganic vapour phase epitaxy Dislocation business
Zdroj:	Journal of Crystal Growth. 244:6-11
ISSN:	0022-0248
DOI:	10.1016/s0022-0248(02)01573-7
Popis:	High-quality GaN films were grown on epitaxial AlN/sapphire templates by metal-organic vapor phase epitaxy. The Hall mobility as high as 790 cm2/V s with the carrier concentration of 7.6×1016 cm−3 at 300 K along with low dislocation density of 5×107 cm−2 have been achieved. The X-ray rocking curve full-width at half-maximum were 61 and 232 arcsec for the (0 0 0 4) and (2024) reflections, respectively. Atomic force microscopy images showed smooth surface morphology and clear step formation. Additionally, pit terminations could be hardly found. Photoluminescence measurement revealed a higher intensity near the band edge.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c9a4821f571998a4bc89a2b61a74a7e1 https://doi.org/10.1016/s0022-0248(02)01573-7 Zobrazit plný text záznamu Full Text from ScienceDirect