Serially Connected Spin Torque Nano-Oscillators Integrated Directly on a Metal–Oxide–Semiconductor Field-Effect Transistor
| Autor: | Mincheol Shin, Doo Hyung Kang, Jaehyun Lee, Woo Jin Jeong |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science business.industry Amplifier Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 01 natural sciences Electronic Optical and Magnetic Materials Power (physics) Synchronization (alternating current) Computer Science::Hardware Architecture 0103 physical sciences MOSFET Optoelectronics Torque Condensed Matter::Strongly Correlated Electrons Field-effect transistor Electrical and Electronic Engineering business Excitation Voltage |
| Zdroj: | IEEE Transactions on Magnetics. 55:1-6 |
| ISSN: | 1941-0069 0018-9464 |
| DOI: | 10.1109/tmag.2019.2893139 |
| Popis: | Employing a macrospin simulation and the Technology-Computer-Aided-Design device simulator, we calculated the output voltage of serially connected spin torque nano-oscillators (STNOs) integrated directly on a metal–oxide–semiconductor field-effect-transistor (MOSFET). Synchronization of the STNOs is induced by both electrical and magneto-dipolar couplings between the STNOs. In this model, the voltage across the load resistance connected to the STNOs in series acts as the gate voltage of the MOSFET. We revealed that the voltage gain of the STNOs directly integrated on the MOSFET is determined by combining the gain of the synchronized STNOs and MOSFET amplifier, and consequently, the output power of the STNOs is significantly enhanced. In addition, the output voltage of the synchronized STNOs depended on the load resistance. |
| Databáze: | OpenAIRE |
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