Device and circuit performance of SiGe HBTs in 130nm BiCMOS process with fT/fMAX of 250/330GHz

Autor:	Scott K. Reynolds, Bodhisatwa Sadhu, Vibhor Jain, Peng Cheng, John J. Pekarik, David L. Harame, Thomas Kessler, Peter B. Gray, Panglijen Candra, Blaine J. Gross, K. Newton, Renata Camillo-Castillo, Arun Natarajan, Alberto Valdes-Garcia
Rok vydání:	2014
Předmět:	Materials science business.industry Circuit performance Bicmos process Electrical engineering Electronic engineering BiCMOS business
Zdroj:	2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).
DOI:	10.1109/bctm.2014.6981294
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c99a09f745adb33977bcb63a31afabbb https://doi.org/10.1109/bctm.2014.6981294 Zobrazit plný text záznamu