Formation of titanium oxide films on the surface of porous silicon carbide

Autor:	O. S. Kondratenko, L. M. Kapitanchuk, A. M. Svetlichnyi, N. N. Moskovchenko, Yu. Yu. Bacherikov, N.L. Dmitruk, O. B. Okhrimenko, R. V. Konakova, V. V. Milenin
Rok vydání:	2008
Předmět:	Porous silicon carbide Photoluminescence Materials science Physics and Astronomy (miscellaneous) Chemical engineering Rutile Rapid thermal annealing Mass spectrometry Nanoclusters Auger Titanium oxide
Zdroj:	Technical Physics. 53:1232-1235
ISSN:	1090-6525 1063-7842
DOI:	10.1134/s1063784208090168
Popis:	The influence of rapid thermal annealing (RTA) on the properties of a titanium film on the surface of porous silicon carbide is considered. It is shown that an increase in the RTA temperature to 900°C stabilizes the phase composition of the forming titanium oxide over the film, which is identified as rutile. Due to the formation of titanium oxide nanoclusters under the action of RTA, an additional photoluminescence band arises near 2.5 eV. Based on Auger spectrometry data, a multilayer model to calculate the optical parameters of titanium oxide films covering porous silicon carbide is suggested.
Databáze:	OpenAIRE
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