Evaluation of Semiconductor Device Analysis Using the Net-2 Computer Program
| Autor: | M. G. Krebs, J. P. Raymond |
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| Rok vydání: | 1972 |
| Předmět: |
Computer science
business.industry Transistor Electrical engineering Semiconductor device modeling Multiple-emitter transistor Electrical element Hardware_PERFORMANCEANDRELIABILITY Semiconductor device Integrated circuit law.invention law Hardware_INTEGRATEDCIRCUITS Electronic engineering Electronics business Hardware_LOGICDESIGN Diode |
| Popis: | SMETAL OXIDE SEMICONDUCTORS, CDC 6600 COMPUTERS, TRANSIENT RADIATION EFFECTS(ELECTRONICS)An evaluation of the capability of the NET-2 Circuit/System Analysis Computer Program to perform analysis of radiation effects on complex semiconductor devices and microcircuits is presented. The mathematical models considered include both the terminal built-in models and Linvill lumped models of bipolar and MOS devices. Computations of electrical performance and transient radiation-induced response are performed and compared to available exact results. The derivation of complex models for the elements of a junction- isolated bipolar microcircuit (including the multiple emitter transistor) is demonstrated as well as the analysis of a complete junction-isolated TTL Gate microcircuit. NET-2 capabilities in terms of computer run times, numbers of circuit elements allowed, and accuracy of solution are discussed. Device analysis examples include a p-n junction diode and an intrinsic lumped model p- n-p transistor. |
| Databáze: | OpenAIRE |
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