High Electron Mobility Transistors Yield Improvement with Ultrasonically Assisted Recess for High-Speed Integrated Circuits
Autor: | Hyung-Tae Kim, Seong−Jin Yeon, Gyungseon Seol, Kwang-Seok Seo, Jongwon Lee |
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Rok vydání: | 2006 |
Předmět: |
Electron mobility
Materials science Physics and Astronomy (miscellaneous) business.industry Transistor General Engineering Induced high electron mobility transistor General Physics and Astronomy Saturation velocity Nanotechnology Integrated circuit High-electron-mobility transistor law.invention Semiconductor law Optoelectronics business Saturation (magnetic) |
Zdroj: | Japanese Journal of Applied Physics. 45:3376-3379 |
ISSN: | 1347-4065 0021-4922 |
Popis: | InAlAs/InGaAs high electron mobility transistors (HEMTs) have been a great contribution to the research and development of high-speed integrated circuits, owing to their high electron mobilities, high saturation velocities, and high sheet electron densities. In integrated circuits using a HEMT as active device, the gate recess process has considerable influence on the yield and uniformity. The wet recess of a 0.1 µm gate footprint has difficulty achieving a high yield greater than 98% due to a nonuniform reaction between the etchant and the semiconductor. A uniform initial reaction between the InGaAs cap layer and the wet etchant mainly determines the yield and uniformity. In this paper, we present an ultrasonically assisted recess method of promoting a uniform initial reaction in the recess process. This method enables us to achieve a high yield and a high uniformity in integrated circuits. |
Databáze: | OpenAIRE |
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