Carbon hard masks for etching sub-90nm structures
| Autor: | Ulrich Egger, Matthias Markert, Alessia Scire, Ralf Koepe, Kevin A. Pears, Momtchil Stavrev, Lee Donohue |
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| Rok vydání: | 2005 |
| Předmět: |
Materials science
Oxide chemistry.chemical_element Nanotechnology Nitride Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Etching (microfabrication) Miniaturization Electrical and Electronic Engineering Reactive-ion etching Carbon Hard mask Dram |
| Zdroj: | Microelectronic Engineering. 81:156-161 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/j.mee.2005.05.002 |
| Popis: | Carbon hard mask structures have been used to etch a variety of materials typically used in sub 90nm DRAM manufacture. The results indicate that carbon hard masks can be used very effectively to structure oxide, nitride and metal films giving the CD performance required for the technologies being investigated. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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