Linear and nonlinear optical properties of GeSe 2-x Sn x (0 ≤ x ≤ 0.8) thin films for optoelectronic applications
| Autor: | A.E. Bekheet, Ahmed Darwish, M.M. El-Nahass, M. Rashad |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science Chalcogenide business.industry Band gap Mechanical Engineering Metals and Alloys 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Amorphous solid chemistry.chemical_compound Nonlinear optical chemistry Absorption edge Mechanics of Materials 0103 physical sciences Materials Chemistry Transmittance Optoelectronics Thin film 0210 nano-technology business Refractive index |
| Zdroj: | Journal of Alloys and Compounds. 709:640-645 |
| ISSN: | 0925-8388 |
| DOI: | 10.1016/j.jallcom.2016.08.280 |
| Popis: | The linear optical properties of amorphous GeSe2-xSnx (where 0 ≤ x ≤ 0.8) films were studied using spectrophotometric measurements of transmittance (T) and reflectance (R) at typical frequencies of light in the wavelength range of 200–2500 nm. Structural properties affirm the amorphous nature of these films. Our investigations of the linear optical properties showed that the optical band gap decreases and the refractive index increases with an increase in Sn content in the Ge–Se system. It was found that the third-order nonlinear optical susceptibility is a function of Sn in the Ge–Se system. The values of the third-order nonlinear optical susceptibility increased with an increase in Sn content. The enhancement in the susceptibility of GeSe2-xSnx films (0 ≤ x ≤ 0.8) with an increase in Sn content could be explained in terms of the absorption edge. |
| Databáze: | OpenAIRE |
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