| Autor: |
Subir Kumar Sarkar, Savio Jay Sengupta, Pritam Kumar Das, Abhishek Ghosh Roy, Bijoy Goswami |
| Rok vydání: |
2021 |
| Předmět: |
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| Zdroj: |
2021 Devices for Integrated Circuit (DevIC). |
| DOI: |
10.1109/devic50843.2021.9455811 |
| Popis: |
The performance of a double gate TFET with trapezoidal shaped channel has been analyzed in this article. The proposed trapezoidal shaped double gate TFET (TDG-TFET) provides a better ON to OFF current ratio (I ON /I OFF ) as well as an improved subthreshold swing (SS) in comparison with a conventional TFET. The performance analysis of the proposed TDG-TFET has been achieved by varying different important device parameters such as oxide thickness, drain voltage (VDS), channel length, gate work function and oxide thickness. For simulating purpose, SILVACO ATLAS has been considered. It can be observed that the achieved I ON /I OFF and SS is 1013 and 23mv/decade at VDS 0.5V. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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